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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC3371 description collector-emiiter sustaining voltage- : v ceo(sus) = 500v(min.) low collector saturation voltage : v ce(sat) = 1.0v(max.)@ i c = 8a high speed switching applications designed for power switching applications. absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage 800 v v ceo collector-emitter voltage 500 v v ebo emitter-base voltage 7 v i c collector current-continuous 15 a i cm collector current-peak 30 a i b b base current-continuous 5 a p c collector power dissipation @t c =25 200 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3371 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.5a; l= 25mh 500 v v ce( sat ) collector-emitter saturation voltage i c = 8a; i b = 1.6a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 8a; i b = 1.6a b 1.5 v i cbo collector cutoff current v cb = 800v; i e = 0 0.1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 0.1 ma h fe-1 dc current gain i c = 0.1a; v ce = 5v 15 h fe-2 dc current gain i c = 8a; v ce = 5v 10 switching times; resistive load t on turn-on time 1.0 s t s storage time 3.0 s t f fall time i c = 8a; i b1 = -i b2 = 1.6a; v cc = 200v 1.0 s isc website www.iscsemi.cn |
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